ZXMN2AMC document number: ds35089 rev. 1 - 2 1 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated 20v dual n-channel en hancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = 25c (notes 4 & 7) 20v 120m @ v gs = 4.5v 3.7a 300m @ v gs = 2.5v 2.3a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? dc-dc converters ? power management functions ? disconnect switches ? portable applications features and benefits ? low profile package, for thin applications ? low rthj-a, thermally efficient package ? 6mm 2 footprint, 50% smaller than tsop6 and sot23-6 ? low on-resistance ? fast switching speed ? ?lead-free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn3020b-8 ? terminals: pre-plated nipdau leadframe ? nominal package height: 0.8mm ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) ordering information (note 3) part number marking reel size (inches) tape width (mm) quantity per reel ZXMN2AMCta dna 7 8 3000 notes: 1. no purposefully added lead 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information equivalent circuit dna = product type marking code top view, dot denotes pin 1 bottom view pin-out d2 d2 d1 d1 g2 s2 g1 s1 d2 d1 pin 1 d2 s2 g2 d1 s1 g1 top view bottom view dfn3020b-8 dna
ZXMN2AMC document number: ds35089 rev. 1 - 2 2 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 20 v gate-source voltage v gss 12 continuous drain current v gs = 4.5v (notes 4 & 7) i d 3.7 a t a = 70c (notes 4 & 7) 3.0 (notes 3 & 7) 2.9 pulsed drain current v gs = 4.5v (notes 6 & 7) i dm 13 continuous source current (body diode) (notes 4 & 7) i s 3.0 pulse source current (body diode) (notes 6 & 7) i sm 13 thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (notes 3 & 7) p d 1.50 12 w mw/c (notes 4 & 7) 2.45 19.6 (notes 5 & 7) 1.13 9 (notes 5 & 8) 1.70 13.6 thermal resistance, junction to ambient (notes 3 & 7) r ja 83.3 c/w (notes 4 & 7) 51.0 (notes 5 & 7) 111 (notes 5 & 8) 73.5 thermal resistance, junction to lead (notes 7 & 9) r jl 17.1 operating and storage temperature range t j , t stg -55 to +150 c notes: 3. for a device surface mounted on 28mm x 28mm (8 sq cm) fr4 pcb with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. the heatsink is split in half with the exposed drain pads connected t o each half. 4. same as note (3) except the device is measured at t < 5 sec. 5. same as note (3), except the device is surface mounted on 31mm x 31mm (10 sq cm) fr4 pcb with high coverage of single sided 1oz copper. 6. same as note (3), except the device is pulsed with d = 0.02 and pulse width 300 s. the pulse current is limited by the max imum junction temperature. 7. for a dual device with one active die. 8. for dual device with 2 active die running at equal power. 9. thermal resistance from junction to so lder-point (at the end of the drain lead).
ZXMN2AMC document number: ds35089 rev. 1 - 2 3 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated thermal characteristics 11 0 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 8 sq cm 2oz cu one active die 100us 100ms 1s r ds(on) limited 1ms safe operating area single pulse, t amb =25c dc 10ms i d drain current (a) v ds drain-source voltage (v) 10 sq cm 1oz cu one active die 10 sq cm 1oz cu two active die 8 sq cm 2oz cu one active die derating curve max power dissipation (w) temperature (c) 8 sq cm 2oz cu one active die d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 2oz cu two active die 1oz cu two active die 1oz cu one active die 2oz cu one active die 2oz cu two active die thermal resistance v board area thermal resistance (c/w) board cu area (sqcm) 1oz cu one active die 1oz cu two active die 2oz cu one active die power dissipation v board area t amb =25c t j max =150c continuous p d dissipation (w) board cu area (sqcm)
ZXMN2AMC document number: ds35089 rev. 1 - 2 4 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 20 - - v i d = 250 a, v gs = 0v zero gate voltage drain current i dss - - 1 p a v ds = 20v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 12v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) 0.7 - 3.0 v i d = 250 a, v ds = v gs static drain-source on-resistance (note 10) r ds (on) - 0.085 0.120 ? v gs = 4.5v, i d = 4a 0.140 0.300 v gs = 2.5v, i d = 1.5a forward transconductance (note 10 & 11) g fs - 6.2 - s v ds = 10v, i d = 4a diode forward voltage (note 10) v sd - 0.9 0.95 v i s = 3.2a, v gs = 0v reverse recover time (note 11) t r r - 23 - ns i s = 4a, di/dt = 100a/s reverse recover charge (note 11) q r r - 5.7 - nc dynamic characteristics (note 11) input capacitance c iss - 299 - pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 60 - pf reverse transfer capacitance c rss - 33 - pf total gate charge (note 12) q g - 0.8 - nc v gs = 2.5v v ds = 10v i d = 4a total gate charge (note 12) q g - 3.1 - nc v gs = 4.5v gate-source charge (note 12) q g s - 0.7 - nc gate-drain charge (note 12) q g d - 1.0 - nc turn-on delay time (note 12) t d ( on ) - 2.3 - ns v ds = 10v, i d = 4a v gs = 5v, r g = 6 ? turn-on rise time (note 12) t r - 2.6 - ns turn-off delay time (note 12) t d ( off ) - 1.6 - ns turn-off fall time (note 12) t f - 1.3 - ns notes: 10. measured under pulsed conditions. width 300s. duty cycle 2%. 11. for design aid only, not subject to production testing. 12. switching characteristics are independent of operating junction temperature.
ZXMN2AMC document number: ds35089 rev. 1 - 2 5 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated typical electrical characteristics 0.1 1 10 0.1 1 10 0.1 1 10 0.1 1 10 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 1 0.4 0.6 0.8 1.0 1.2 0.1 1 10 2v 1.5v 4.5v 2.5v output characteristics t = 25c 3v v gs 10v i d drain current (a) v ds drain-source voltage (v) 1.5v 2v 2.5v 4.5v 10v 1v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 4.5v i d = 4a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4.5v 2v 10v 1.5v 2.5v on-resistance v drain current t = 25c 3v v gs r ds(on) drain-source on-resistance (w) i d drain current (a) t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
ZXMN2AMC document number: ds35089 rev. 1 - 2 6 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated typical electrical characteristics - continued 0.1 1 10 0 200 400 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 01234 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i d = 4a v ds = 10v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) test circuits current regulator charge gate charge test circuit switching time test circuit basicgatechargewaveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t v ds dd v r d r g v ds i d i g d(off)
ZXMN2AMC document number: ds35089 rev. 1 - 2 7 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated package outline dimensions suggested pad layout dfn3020b-8 dim min max typ a 0.77 0.83 0.80 a1 0 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 2.95 3.075 3.00 d2 0.82 1.02 0.92 d4 1.01 1.21 1.11 e - - 0.65 e 1.95 2.075 2.00 e2 0.43 0.63 0.53 l 0.25 0.35 0.30 z - - 0.375 all dimensions in mm dimensions value (in mm) c 0.650 g 0.285 g1 0.090 x 0.400 x1 1.120 y 0.730 y1 0.500 y2 0.365 b e e2 d2 l d e a z a1 a3 d4 d4 c x1 g1 x y1 y y2 g
ZXMN2AMC document number: ds35089 rev. 1 - 2 8 of 8 www.diodes.com december 2010 ? diodes incorporated ZXMN2AMC a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com
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